Discrete Semiconductor Products

ACGRAT104L-HF

Active

Comchip Technology

DIODE GEN PURP 800V 1A 2010

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

Comchip Technology

DIODE GEN PURP 800V 1A 2010

Technical Specifications

Parameters and characteristics for this part

Specification	ACGRAT104L-HF

Capacitance @ Vr, F	8 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	2-SMD, No Lead
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	2010
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Grade	Speed	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification
Comchip Technology ACGRAT104L-HF	Standard	2010	1 V	Automotive	200 mA 500 ns	Surface Mount	1 A	5 µA	2-SMD No Lead	8 pF	800 V	175 ░C	-65 C	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 1A Surface Mount 2010

Technical documentation and resources

No documents available