Discrete Semiconductor Products

UGE10BCT-E3/45

Obsolete

DIODE ARRAY GP 100V 5A TO220-3

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Discrete Semiconductor Products

Obsolete

DIODE ARRAY GP 100V 5A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	UGE10BCT-E3/45

Current - Average Rectified (Io) (per Diode)	5 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Technology	Diode Configuration	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)
Vishay General Semiconductor - Diodes Division UGE10BCT-E3/45	100 V	TO-220-3	1.1 V	200 mA 500 ns	150 °C	-40 °C	10 µA	Through Hole	TO-220-3	Standard	1 Pair Common Cathode	25 ns	5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 100 V 5A Through Hole TO-220-3

Technical documentation and resources

No documents available