Specification	RN2116MFV,L3F

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Mounting Type	Surface Mount
Package / Case	SOT-723
Power - Max [Max]	150 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	VESM
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

RN2116MFV Series

Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/10 kΩ, SOT-723(VESM)

Part	Resistor - Base (R1)	Power - Max [Max]	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector (Ic) (Max) [Max]	Resistor - Emitter Base (R2)	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage RN2116MFV,L3F	4.7 kOhms	150 mW	Surface Mount	SOT-723	500 nA	300 mV	PNP - Pre-Biased	100 mA	10 kOhms	VESM	50 V	50

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/10 kΩ, SOT-723(VESM)

Technical documentation and resources