Discrete Semiconductor Products

ATP218-TL-H

Obsolete

MOSFET N-CH 30V 100A ATPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 100A ATPAK

Technical Specifications

Parameters and characteristics for this part

Specification	ATP218-TL-H

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC
Input Capacitance (Ciss) (Max) @ Vds	6600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	ATPAK (2 leads+tab)
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case
ON Semiconductor ATP218-TL-H	6600 pF	3.8 mOhm	MOSFET (Metal Oxide)	N-Channel	100 A	150 °C	60 W	10 V	70 nC	ATPAK	Surface Mount	2.5 V 4.5 V	30 V	ATPAK (2 leads+tab)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 100A (Ta) 60W (Tc) Surface Mount ATPAK

Technical documentation and resources

No documents available