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Discrete Semiconductor Products
A2T14H450-23NR6
ActiveFreescale Semiconductor - NXP
RF POWER FIELD-EFFECT TRANSISTOR
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Discrete Semiconductor Products
A2T14H450-23NR6
ActiveFreescale Semiconductor - NXP
RF POWER FIELD-EFFECT TRANSISTOR
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | A2T14H450-23NR6 |
|---|---|
| Current - Test | 1 A |
| Current Rating (Amps) | 10 µA |
| Frequency [Max] | 1511 MHz |
| Frequency [Min] | 1452 MHz |
| Gain | 18.8 dB |
| Mounting Type | Chassis Mount |
| Package / Case | OM-1230-4L2S |
| Supplier Device Package | OM-1230-4L2S |
| Voltage - Rated | 65 V |
| Voltage - Test | 31 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 150 | $ 98.63 | |
Description
General part information
A2T14 Series
RF Mosfet 31 V 1 A 1.452GHz ~ 1.511GHz 18.8dB OM-1230-4L2S
Documents
Technical documentation and resources