Discrete Semiconductor Products

V6KM120DU-M3/I

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DIODE ARR SCHOTT 120V 3A FLATPAK

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Discrete Semiconductor Products

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DIODE ARR SCHOTT 120V 3A FLATPAK

Technical Specifications

Parameters and characteristics for this part

Specification	V6KM120DU-M3/I

Current - Average Rectified (Io) (per Diode)	3 A
Current - Reverse Leakage @ Vr	300 µA
Diode Configuration	2 Independent
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	8-PowerTDFN
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	FlatPAK 5x6 (Dual)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If [Max]	820 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Grade	Package / Case	Technology	Diode Configuration	Supplier Device Package	Speed	Current - Average Rectified (Io) (per Diode)	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]
Vishay General Semiconductor - Diodes Division V6KM120DU-M3/H	120 V	AEC-Q101	-40 °C	175 ░C	300 µA	Automotive	8-PowerTDFN	Schottky	2 Independent	FlatPAK 5x6 (Dual)	200 mA 500 ns	3 A	Surface Mount	820 mV
Vishay General Semiconductor - Diodes Division V6KM120DU-M3/I	120 V	AEC-Q101	-40 °C	175 ░C	300 µA	Automotive	8-PowerTDFN	Schottky	2 Independent	FlatPAK 5x6 (Dual)	200 mA 500 ns	3 A	Surface Mount	820 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 120 V 3A Surface Mount 8-PowerTDFN

Technical documentation and resources