
MT41K128M8DA-107 IT:J
ActiveDRAM, DDR3L, 1 GBIT, 128M X 8BIT, 933 MHZ, TFBGA, 78 PINS
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MT41K128M8DA-107 IT:J
ActiveDRAM, DDR3L, 1 GBIT, 128M X 8BIT, 933 MHZ, TFBGA, 78 PINS
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Technical Specifications
Parameters and characteristics for this part
| Specification | MT41K128M8DA-107 IT:J |
|---|---|
| Access Time | 20 ns |
| Clock Frequency | 933 MHz |
| Memory Format | DRAM |
| Memory Interface | Parallel |
| Memory Organization | 128 M |
| Memory Size | 1 Mbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 95 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 78-TFBGA |
| Supplier Device Package | 78-FBGA (8x10.5) |
| Technology | SDRAM - DDR3L |
| Voltage - Supply [Max] | 1.45 V |
| Voltage - Supply [Min] | 1.283 V |
Pricing
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Description
General part information
MT41K128M8 Series
MT41K128M8DA-107 IT:J is a 1.35V DDR3L SDRAM device. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes. The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK.
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