Discrete Semiconductor Products

2SK3844(Q)

Obsolete

MOSFET N-CH 60V 45A TO220NIS

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 45A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3844(Q)

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	196 nC
Input Capacitance (Ciss) (Max) @ Vds	12400 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Supplier Device Package	TO-220NIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Operating Temperature	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage 2SK3844(Q)	N-Channel	12400 pF	10 V	TO-220NIS	60 V	Through Hole	45 W	150 °C	20 V	MOSFET (Metal Oxide)	45 A	TO-220-3 Full Pack	196 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 60 V 45A (Ta) 45W (Tc) Through Hole TO-220NIS

Technical documentation and resources