Discrete Semiconductor Products

SI8483DB-T2-E1

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MOSFET P-CH 12V 16A 6MICRO FOOT

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Discrete Semiconductor Products

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MOSFET P-CH 12V 16A 6MICRO FOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8483DB-T2-E1

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	1840 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFBGA
Power Dissipation (Max)	13 W, 2.77 W
Rds On (Max) @ Id, Vgs [Max]	26 mOhm
Supplier Device Package	6-Micro Foot™ (1.5x1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	800 mV

Part	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology
Vishay General Semiconductor - Diodes Division SI8483DB-T2-E1	Surface Mount	12 V	1840 pF	10 V	26 mOhm	6-UFBGA	65 nC	16 A	6-Micro Foot™ (1.5x1)	-55 °C	150 °C	P-Channel	2.77 W 13 W	800 mV	1.5 V 4.5 V	MOSFET (Metal Oxide)

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General part information

P-Channel 12 V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Technical documentation and resources