Discrete Semiconductor Products
R6013VND3TL1
ActiveRohm Semiconductor
600V 13A TO-252, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE
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Discrete Semiconductor Products
R6013VND3TL1
ActiveRohm Semiconductor
600V 13A TO-252, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | R6013VND3TL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 131 W |
| Rds On (Max) @ Id, Vgs | 300 mOhm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 6.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6013VND3 Series
R6013VND3 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.
Documents
Technical documentation and resources