Discrete Semiconductor Products

ATP101-TL-HX

Obsolete

MOSFET P-CH 30V 25A ATPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 25A ATPAK

Technical Specifications

Parameters and characteristics for this part

Specification	ATP101-TL-HX

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.5 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	ATPAK (2 leads+tab)
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

P-Channel Power MOSFET, -30V, -25A, 30mΩ

Part	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Operating Temperature	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor ATP101-TL-H	ATPAK	MOSFET (Metal Oxide)	30 V	30 mOhm	Surface Mount	20 V	150 °C	P-Channel	25 A	4.5 V 10 V	ATPAK (2 leads+tab)	18.5 nC
ON Semiconductor ATP101-TL-HX	ATPAK	MOSFET (Metal Oxide)	30 V	30 mOhm	Surface Mount	20 V	150 °C	P-Channel	25 A	4.5 V 10 V	ATPAK (2 leads+tab)	18.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

ATP101 is P-Channel Power MOSFET, -30V, -25A, 30mΩ, Single ATPAK for General-Purpose Switching Device Application.

Technical documentation and resources

No documents available