Discrete Semiconductor Products

SIS454DN-T1-GE3

Active

MOSFET N-CH 20V 35A PPAK1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 20V 35A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS454DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.8 W
Rds On (Max) @ Id, Vgs	3.7 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type
Vishay General Semiconductor - Diodes Division SIS454DN-T1-GE3	4.5 V 10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	2.2 V	3.7 mOhm	1900 pF	PowerPAK® 1212-8	20 V	20 V	53 nC	PowerPAK® 1212-8	Surface Mount	35 A	3.8 W 52 W	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources