Discrete Semiconductor Products

PMZ600UNELYL

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MOSFET N-CH 20V 600MA DFN1006-3

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 600MA DFN1006-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZ600UNELYL

Drain to Source Voltage (Vdss)	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	21.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs	620 mOhm
Supplier Device Package	SOT-883
Vgs(th) (Max) @ Id	950 mV

Part	Supplier Device Package	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP PMZ600UNELYL	SOT-883	SC-101 SOT-883	2.7 W	620 mOhm	N-Channel	-55 °C	150 °C	950 mV	0.7 nC	Surface Mount	21.3 pF	20 V

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General part information

N-Channel 20 V 600mA (Tc) 2.7W (Tc) Surface Mount SOT-883

Technical documentation and resources