Discrete Semiconductor Products

VS-80APF06-M3

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DIODE GEN PURP 600V 80A TO247AC

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 80A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-80APF06-M3

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	190 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Current - Average Rectified (Io)	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Technology
Vishay General Semiconductor - Diodes Division VS-80APF06-M3	TO-247AC	150 °C	-40 °C	600 V	Through Hole	TO-247-3	80 A	200 mA 500 ns	100 µA	1.25 V	190 ns	Standard

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General part information

Diode 600 V 80A Through Hole TO-247AC

Technical documentation and resources