
Discrete Semiconductor Products
BC52PA,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 1 A PNP MEDIUM POWER TRANSISTORS
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Discrete Semiconductor Products
BC52PA,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 1 A PNP MEDIUM POWER TRANSISTORS
Technical Specifications
Parameters and characteristics for this part
| Specification | BC52PA,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 63 |
| Frequency - Transition | 145 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 3-PowerUDFN |
| Power - Max [Max] | 420 mW |
| Qualification | AEC-Q100 |
| Supplier Device Package | 3-HUSON |
| Supplier Device Package [x] | 2 |
| Supplier Device Package [y] | 2 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BC52PA Series
PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources