Discrete Semiconductor Products

AOSD62666E

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MOSFET 2N-CH 60V 9.5A 8SOIC

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 9.5A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AOSD62666E

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	9.5 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	755 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2.5 W
Rds On (Max) @ Id, Vgs	14.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Package / Case	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Configuration	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Feature	Mounting Type	Technology	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Alpha & Omega Semiconductor Inc. AOSD62666E	755 pF	14.5 mOhm	2.2 V	0.154 in	8-SOIC	3.9 mm	10 nC	2 N-Channel (Dual)	9.5 A	60 V	8-SOIC	Logic Level Gate	Surface Mount	MOSFET (Metal Oxide)	2.5 W	150 °C	-55 °C

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General part information

Mosfet Array 60V 9.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Technical documentation and resources