Discrete Semiconductor Products

SIHP052N60EF-GE3

Active

MOSFET EF SERIES TO-220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET EF SERIES TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP052N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	101 nC
Input Capacitance (Ciss) (Max) @ Vds	3380 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	278 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	FET Type
Vishay General Semiconductor - Diodes Division SIHP052N60EF-GE3	30 V	101 nC	5 V	TO-220-3	TO-220AB	Through Hole	3380 pF	48 A	-55 °C	150 °C	278 W	600 V	10 V	52 mOhm	MOSFET (Metal Oxide)	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 48A (Tc) 278W (Tc) Through Hole TO-220AB

Technical documentation and resources