Discrete Semiconductor Products
R8006KND3TL1
ActiveRohm Semiconductor
HIGH-SPEED SWITCHING, NCH 800V 6A, TO-252 (DPAK), POWER MOSFET
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Discrete Semiconductor Products
R8006KND3TL1
ActiveRohm Semiconductor
HIGH-SPEED SWITCHING, NCH 800V 6A, TO-252 (DPAK), POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R8006KND3TL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 650 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 83 W |
| Rds On (Max) @ Id, Vgs | 900 mOhm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 818 | $ 4.43 | |
Description
General part information
R8006KND3 Series
The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Documents
Technical documentation and resources