Discrete Semiconductor Products

TSM2306CX RFG

NRND

MOSFET, N-CH, 30V, 3.5A, SOT-23 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

NRND

MOSFET, N-CH, 30V, 3.5A, SOT-23 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2306CX RFG

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.5 nC
Input Capacitance (Ciss) (Max) @ Vds	555 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	57 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Package / Case	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Taiwan Semiconductor Corporation TSM2306CX RFG	150 °C	-55 °C	1.25 W	30 V	555 pF	5.5 nC	20 V	SC-59 SOT-23-3 TO-236-3	Surface Mount	N-Channel	4.5 V 10 V	3.5 A	SOT-23	MOSFET (Metal Oxide)	3 V	57 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 3.5A (Ta) 1.25W (Ta) Surface Mount SOT-23

Technical documentation and resources

No documents available