Discrete Semiconductor Products

IRLU110PBF

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MOSFET N-CH 100V 4.3A TO251AA

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Discrete Semiconductor Products

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MOSFET N-CH 100V 4.3A TO251AA

Technical Specifications

Parameters and characteristics for this part

Specification	IRLU110PBF

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	25 W, 2.5 W
Rds On (Max) @ Id, Vgs	540 mOhm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Power Dissipation (Max)	Package / Case
Vishay General Semiconductor - Diodes Division IRLU110PBF	10 V	250 pF	540 mOhm	4 V 5 V	4.3 A	100 V	Through Hole	2 V	TO-251AA	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	2.5 W 25 W	IPAK TO-251-3 Short Leads TO-251AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA

Technical documentation and resources