Discrete Semiconductor Products

UF5404-E3/73

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DIODE GEN PURP 400V 3A DO201AD

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Discrete Semiconductor Products

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DIODE GEN PURP 400V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	UF5404-E3/73

Capacitance @ Vr, F	45 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case	Supplier Device Package	Mounting Type	Speed	Technology
Vishay General Semiconductor - Diodes Division UF5404-E3/73	400 V	10 µA	50 ns	1 V	150 °C	-55 °C	3 A	45 pF	DO-201AD Axial	DO-201AD	Through Hole	200 mA 500 ns	Standard

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General part information

Diode 400 V 3A Through Hole DO-201AD

Technical documentation and resources