Discrete Semiconductor Products

KBP4MI_T0_00101

NRND

KBP, GENERAL

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Discrete Semiconductor Products

NRND

KBP, GENERAL

Technical Specifications

Parameters and characteristics for this part

Specification	KBP4MI_T0_00101

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	KBP, 4-ESIP
Supplier Device Package	KBP
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V
Voltage - Peak Reverse (Max) [Max]	1 kV

Part	Current - Average Rectified (Io)	Voltage - Peak Reverse (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Diode Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Supplier Device Package
Panjit International Inc. KBP4MI_T0_00101	4 A	1 kV	4-ESIP KBP	5 µA	Single Phase	Through Hole	150 °C	-55 °C	1.1 V	Standard	KBP
Panjit International Inc. KBP4M_T0_00101	4 A	1 kV	4-ESIP KBP	5 µA	Single Phase	Through Hole	150 °C	-55 °C	1.1 V	Standard	KBP

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General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole KBP

Technical documentation and resources