Discrete Semiconductor Products

BYW54-TAP

Active

DIODE AVALANCHE 600V 2A SOD57

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE AVALANCHE 600V 2A SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	BYW54-TAP

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	4 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-57
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Technology	Mounting Type	Speed	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division BYW54-TR	Avalanche	Through Hole	Standard Recovery >500ns	200 mA	1 µA	175 ░C	-55 C	Axial SOD-57	1 V	SOD-57	2 A	4 µs	600 V
Vishay General Semiconductor - Diodes Division BYW54-TAP	Avalanche	Through Hole	Standard Recovery >500ns	200 mA	1 µA	175 ░C	-55 C	Axial SOD-57	1 V	SOD-57	2 A	4 µs	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 2A Through Hole SOD-57

Technical documentation and resources