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Infineon Technologies AG-BCR583E6327HTSA1 Digital BJT - Pre-Biased Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Discrete Semiconductor Products

BCR583E6327HTSA1

LTB
INFINEON

TRANS DIGITAL BJT PNP 50V 0.5A 330MW 3-PIN SOT-23 T/R AUTOMOTIVE AEC-Q101

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Infineon Technologies AG-BCR583E6327HTSA1 Digital BJT - Pre-Biased Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Discrete Semiconductor Products

BCR583E6327HTSA1

LTB
INFINEON

TRANS DIGITAL BJT PNP 50V 0.5A 330MW 3-PIN SOT-23 T/R AUTOMOTIVE AEC-Q101

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBCR583E6327HTSA1
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]70
Frequency - Transition150 MHz
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]330 mW
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
Supplier Device PackagePG-SOT23
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic [Max]300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 3000$ 0.06
DigikeyCut Tape (CT) 1$ 0.38
Digi-Reel® 1$ 0.38
Tape & Reel (TR) 18000$ 0.07
30000$ 0.07
75000$ 0.06
150000$ 0.06

Description

General part information

BCR583 Series

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 150 MHz 330 mW Surface Mount PG-SOT23

Documents

Technical documentation and resources

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