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RMLV0414EGSB-4S2#HA1
Integrated Circuits (ICs)

RMLV0414EGSB-4S2#HA1

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Renesas Electronics Corporation

4MB ADVANCED LPSRAM (256-KWORD × 16-BIT)

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RMLV0414EGSB-4S2#HA1
Integrated Circuits (ICs)

RMLV0414EGSB-4S2#HA1

Active
Renesas Electronics Corporation

4MB ADVANCED LPSRAM (256-KWORD × 16-BIT)

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRMLV0414EGSB-4S2#HA1
Access Time45 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization256 K
Memory Size512 kB
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 C
Operating Temperature [Min]-40 ¯C
Package / Case44-TSOP (0.400", 10.16mm Width)
Supplier Device Package44-TSOP II
TechnologySRAM
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V
Write Cycle Time - Word, Page [custom]45 ns
Write Cycle Time - Word, Page [custom]45 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 976$ 3.81

Description

General part information

RMLV0414E Series

The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0414E Series has realized higher density, higher performance and low power consumption. The RMLV0414E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II).

Documents

Technical documentation and resources