Discrete Semiconductor Products

DF120R12W2H3B27BOMA1

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THE DF120R12W2H3_B27 IS A BOOSTER IGBT HIGHSPEED 3 MODULE IN A EASYPACK™ 2B HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 120 A.

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Discrete Semiconductor Products

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THE DF120R12W2H3_B27 IS A BOOSTER IGBT HIGHSPEED 3 MODULE IN A EASYPACK™ 2B HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 120 A.

Technical Specifications

Parameters and characteristics for this part

Specification	DF120R12W2H3B27BOMA1

Configuration	Three Phase Inverter
Current - Collector (Ic) (Max) [Max]	50 A
Current - Collector Cutoff (Max) [Max]	1 mA
Input	Standard
Input Capacitance (Cies) @ Vce	2.35 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	180 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Mounting Type	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	NTC Thermistor	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Input Capacitance (Cies) @ Vce	Current - Collector Cutoff (Max) [Max]	Configuration	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Input
INFINEON DF120R12W2H3B27BOMA1	Chassis Mount	180 W	2.4 V		-40 C	150 °C	1200 V	2.35 nF	1 mA	Three Phase Inverter	Module	50 A	Module	Standard

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General part information

EasyPACK™2B 1200 V, 120 A boosterIGBT modulewithPressFIT contact technologyand High Speed IGBT H3.

Technical documentation and resources