Discrete Semiconductor Products

S40YR

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DIODE GEN PURP REV 1.6KV 40A DO5

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Discrete Semiconductor Products

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DIODE GEN PURP REV 1.6KV 40A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	S40YR

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	160 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-5, DO-203AB
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-5
Technology	Reverse Polarity, Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Mounting Type	Technology	Supplier Device Package	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Speed [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor S40YR	Chassis Stud Mount	Reverse Polarity Standard	DO-5	DO-203AB DO-5 Stud	160 °C	-65 C	40 A	200 mA 500 ns	1.1 V	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1600 V 40A Chassis, Stud Mount DO-5

Technical documentation and resources