Discrete Semiconductor Products

AOT360A70L

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MOSFET N-CH 700V 12A TO220

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Discrete Semiconductor Products

Active

MOSFET N-CH 700V 12A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT360A70L

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1360 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
Alpha & Omega Semiconductor Inc. AOT360A70L	22.5 nC	700 V	Through Hole	N-Channel	MOSFET (Metal Oxide)	360 mOhm	TO-220	20 V	12 A	4 V	150 °C	-55 °C	156 W	TO-220-3	1360 pF	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 700 V 12A (Tc) 156W (Tc) Through Hole TO-220

Technical documentation and resources

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