Discrete Semiconductor Products
RHK003N06FRAT146
ActiveRohm Semiconductor
4V DRIVE NCH MOSFET (AEC-Q101 QUALIFIED)
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Discrete Semiconductor Products
RHK003N06FRAT146
ActiveRohm Semiconductor
4V DRIVE NCH MOSFET (AEC-Q101 QUALIFIED)
Technical Specifications
Parameters and characteristics for this part
| Specification | RHK003N06FRAT146 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 300 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 33 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 200 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 1 Ohm |
| Supplier Device Package | SMT3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RHK003N06 Series
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Documents
Technical documentation and resources