Discrete Semiconductor Products
CGD65C025SP2
ActiveCambridge GaN Devices
650V GAN HEMT, 25 MOHM, 60A, BHD
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DocumentsCGD65C025SP2 | Datasheet
Discrete Semiconductor Products
CGD65C025SP2
ActiveCambridge GaN Devices
650V GAN HEMT, 25 MOHM, 60A, BHD
Deep-Dive with AI
DocumentsCGD65C025SP2 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | CGD65C025SP2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type | N-Channel |
| Mounting Type | Wettable Flank, Surface Mount |
| Rds On (Max) @ Id, Vgs | 35 mOhm |
| Supplier Device Package | BHDFN-9-1 |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 4.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1499 | $ 24.99 | |
Description
General part information
CGD65C025SP2
650V GAN HEMT, 25 MOHM, 60A, BHD
Documents
Technical documentation and resources