Discrete Semiconductor Products

2N6519BU

Obsolete

TRANS PNP 300V 0.5A TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 300V 0.5A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	2N6519BU

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	300 V

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type
ON Semiconductor 2N6519BU	50 nA	1 V	TO-92-3	40	625 mW	200 MHz	300 V	PNP	TO-226-3 TO-92-3	-55 °C	150 °C	500 mA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 300 V 500 mA 200MHz 625 mW Through Hole TO-92-3

Technical documentation and resources