Discrete Semiconductor Products

US6U37TR

NRND

Rohm Semiconductor

MOSFET N-CH 30V 1.5A TUMT6

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

Rohm Semiconductor

MOSFET N-CH 30V 1.5A TUMT6

Technical Specifications

Parameters and characteristics for this part

Specification	US6U37TR

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.2 nC
Input Capacitance (Ciss) (Max) @ Vds	80 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	TUMT6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Rohm Semiconductor US6U37TR	1.5 V	N-Channel	240 mOhm	2.5 V 4.5 V	MOSFET (Metal Oxide)	150 °C	700 mW	1.5 A	2.2 nC	6-SMD Flat Leads	12 V	30 V	TUMT6	80 pF	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 1.5A (Ta) 700mW (Ta) Surface Mount TUMT6

Technical documentation and resources

No documents available