Discrete Semiconductor Products

US6U37TR

NRND

MOSFET N-CH 30V 1.5A TUMT6

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 1.5A TUMT6

Technical Specifications

Parameters and characteristics for this part

Specification	US6U37TR

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	80 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	700 mW
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	TUMT6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Operating Temperature	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type
Rohm Semiconductor US6U37TR	150 °C	240 mOhm	700 mW	Surface Mount	12 V	80 pF	30 V	MOSFET (Metal Oxide)	1.5 A	6-SMD Flat Leads	2.2 nC	TUMT6	1.5 V	2.5 V	4.5 V	N-Channel

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General part information

N-Channel 30 V 1.5A (Ta) 700mW (Ta) Surface Mount TUMT6

Technical documentation and resources