Discrete Semiconductor Products

U16BCT-E3/4W

Obsolete

DIODE ARRAY GP 100V 8A TO220-3

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Discrete Semiconductor Products

Obsolete

DIODE ARRAY GP 100V 8A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	U16BCT-E3/4W

Current - Average Rectified (Io) (per Diode)	8 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	80 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Mounting Type	Diode Configuration	Speed	Package / Case
Vishay General Semiconductor - Diodes Division U16DCT-E3/4W	1.1 V	80 ns	10 µA	Standard	TO-220-3	200 V	150 °C	-55 °C	8 A	Through Hole	1 Pair Common Cathode	200 mA 500 ns	TO-220-3
Vishay General Semiconductor - Diodes Division U16BCT-E3/4W	1.1 V	80 ns	10 µA	Standard	TO-220-3	100 V	150 °C	-55 °C	8 A	Through Hole	1 Pair Common Cathode	200 mA 500 ns	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 100 V 8A Through Hole TO-220-3

Technical documentation and resources