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LITTELFUSE LJ6008D8TP
Discrete Semiconductor Products

IPD19DP10NMATMA1

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INFINEON

IPD19DP10NM P-CHANNEL MOSFETS IN NORMAL LEVEL IN DPAK

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LITTELFUSE LJ6008D8TP
Discrete Semiconductor Products

IPD19DP10NMATMA1

Active
INFINEON

IPD19DP10NM P-CHANNEL MOSFETS IN NORMAL LEVEL IN DPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD19DP10NMATMA1
Current - Continuous Drain (Id) @ 25°C2.6 A, 13.7 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs45 nC
Input Capacitance (Ciss) (Max) @ Vds2000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)3 W, 83 W
Rds On (Max) @ Id, Vgs186 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 173$ 1.67
MouserN/A 1$ 1.58
10$ 1.07
100$ 0.74
500$ 0.58
1000$ 0.53
2500$ 0.48
5000$ 0.45
NewarkEach (Supplied on Cut Tape) 1$ 1.61
10$ 1.08
25$ 0.98
50$ 0.88
100$ 0.77
250$ 0.69
500$ 0.61
1000$ 0.55

Description

General part information

IPD19DP10 Series

OptiMOS™ P-channel MOSFETs 100V in DPAKpackage represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on)range and improves efficiency at low loads due to low Qg.

Documents

Technical documentation and resources