Discrete Semiconductor Products

SSM6L12TU,LF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 30 V/-20 V, 0.5 A/-0.5 A, 0.145 Ω@4.5V/0.43 Ω@2.5V, SOT-363F(UF6)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 30 V/-20 V, 0.5 A/-0.5 A, 0.145 Ω@4.5V/0.43 Ω@2.5V, SOT-363F(UF6)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L12TU,LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	30 V, 20 V
Input Capacitance (Ciss) (Max) @ Vds	218 pF, 245 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	260 mOhm, 145 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-20 V, 0.5 A/-0.5 A, 0.145 Ω@4.5V/0.43 Ω@2.5V, SOT-363F(UF6)

Part	Configuration	Operating Temperature	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Power - Max [Max]	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Toshiba Semiconductor and Storage SSM6L12TU,LF	N and P-Channel	150 °C	20 V 30 V	6-SMD Flat Leads	1.1 V	500 mW	MOSFET (Metal Oxide)	Surface Mount	145 mOhm 260 mOhm	218 pF 245 pF	500 mA	UF6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-20 V, 0.5 A/-0.5 A, 0.145 Ω@4.5V/0.43 Ω@2.5V, SOT-363F(UF6)

Technical documentation and resources