VS-GBPC3508W

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BRIDGE RECT 1P 800V 35A GBPC-W

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Discrete Semiconductor Products

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BRIDGE RECT 1P 800V 35A GBPC-W

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GBPC3508W

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	2 mA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBPC-W, 4-Square
Supplier Device Package	GBPC-W
Technology	Standard
Voltage - Peak Reverse (Max) [Max]	800 V

Part	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Diode Type	Technology	Voltage - Peak Reverse (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division GBPC3508/1	QC Terminal	5 µA	4-Square GBPC	Single Phase	Standard	800 V	GBPC	1.1 V	35 A
Vishay General Semiconductor - Diodes Division VS-GBPC3508W	Through Hole	2 mA	4-Square GBPC-W	Single Phase	Standard	800 V	GBPC-W		35 A	-55 °C	150 °C

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General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole GBPC-W

Technical documentation and resources