Discrete Semiconductor Products

SI7905DN-T1-GE3

Obsolete

MOSFET 2P-CH 40V 6A PPAK 1212

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 40V 6A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SI7905DN-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	880 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Power - Max [Max]	20.8 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Power - Max [Max]	Configuration	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI7905DN-T1-E3	PowerPAK® 1212-8 Dual	20.8 W	2 P-Channel	60 mOhm	-55 °C	150 °C	880 pF	Surface Mount	PowerPAK® 1212-8 Dual	40 V	3 V	MOSFET (Metal Oxide)	30 nC	6 A
Vishay General Semiconductor - Diodes Division SI7905DN-T1-GE3	PowerPAK® 1212-8 Dual	20.8 W	2 P-Channel	60 mOhm	-55 °C	150 °C	880 pF	Surface Mount	PowerPAK® 1212-8 Dual	40 V	3 V	MOSFET (Metal Oxide)	30 nC	6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 40V 6A 20.8W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources