Discrete Semiconductor Products

EM6K1T2R

NRND

MOSFET 2N-CH 30V 0.1A EMT6

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Discrete Semiconductor Products

NRND

MOSFET 2N-CH 30V 0.1A EMT6

Technical Specifications

Parameters and characteristics for this part

Specification	EM6K1T2R

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]	13 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	EMT6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Configuration	Mounting Type	FET Feature	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs
Rohm Semiconductor EM6K1T2R	100 mA	1.5 V	13 pF	150 °C	2 N-Channel (Dual)	Surface Mount	Logic Level Gate	EMT6	MOSFET (Metal Oxide)	30 V	SOT-563 SOT-666	8 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 100mA 150mW Surface Mount EMT6

Technical documentation and resources