Discrete Semiconductor Products

SIR472ADP-T1-GE3

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MOSFET N-CH 30V 18A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 18A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR472ADP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1040 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	3.3 W, 14.7 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIR472DP-T1-GE3	PowerPAK® SO-8	-55 °C	150 °C	N-Channel	4.5 V 10 V	2.5 V	12 mOhm	30 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	20 V	820 pF	Surface Mount	23 nC	3.9 W 29.8 W	20 A
Vishay General Semiconductor - Diodes Division SIR472ADP-T1-GE3	PowerPAK® SO-8	-55 °C	150 °C	N-Channel	4.5 V 10 V	2.3 V	9 mOhm	30 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	20 V	1040 pF	Surface Mount		3.3 W 14.7 W	18 A	28 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 18A (Tc) 3.3W (Ta), 14.7W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources