Discrete Semiconductor Products

V12P8-M3/86A

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DIODE SCHOTTKY 80V 4.3A TO277A

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Discrete Semiconductor Products

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DIODE SCHOTTKY 80V 4.3A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	V12P8-M3/86A

Current - Average Rectified (Io)	4.3 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-PowerDFN, TO-277
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If	660 mV

Part	Technology	Qualification	Voltage - Forward (Vf) (Max) @ If	Speed	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division V12P8HM3_A/I	Schottky	AEC-Q101	660 mV	200 mA 500 ns	Surface Mount	150 °C	-40 °C	1 mA	3-PowerDFN TO-277	TO-277A (SMPC)	80 V	Automotive	12 A
Vishay General Semiconductor - Diodes Division V12P8-M3/86A	Schottky		660 mV	200 mA 500 ns	Surface Mount	150 °C	-40 °C	1 mA	3-PowerDFN TO-277	TO-277A (SMPC)	80 V		4.3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 80 V 4.3A Surface Mount TO-277A (SMPC)

Technical documentation and resources