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ONSEMI BD237G
Discrete Semiconductor Products

MCR106-8G

Active
LITTELFUSE

THYRISTOR, 600 V, 200 A, 2.55 A, 4 A, TO-225AA, 3 ROHS COMPLIANT: YES

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ONSEMI BD237G
Discrete Semiconductor Products

MCR106-8G

Active
LITTELFUSE

THYRISTOR, 600 V, 200 A, 2.55 A, 4 A, TO-225AA, 3 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationMCR106-8G
Current - Gate Trigger (Igt) (Max) [Max]200 µA
Current - Hold (Ih) (Max) [Max]5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm)25 A
Current - Off State (Max) [Max] [custom]10 µA
Current - On State (It (AV)) (Max) [Max]2.55 A
Current - On State (It (RMS)) (Max) [Max]4 A
Mounting TypeThrough Hole
Operating Temperature [Max]110 °C
Operating Temperature [Min]-40 C
Package / CaseTO-225AA, TO-126-3
SCR TypeSensitive Gate
Supplier Device PackageTO-225AA
Voltage - Gate Trigger (Vgt) (Max)1 V
Voltage - Off State600 V
Voltage - On State (Vtm) (Max) [Max]2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 1397$ 1.311m+
NewarkEach 1$ 1.441m+
10$ 0.91
25$ 0.81
50$ 0.70
100$ 0.60
500$ 0.47
1000$ 0.43
2500$ 0.38
TMEN/A 1$ 1.10<1d
10$ 0.72
25$ 0.64
100$ 0.53
250$ 0.47

Description

General part information

MCR106-8G Series

This Silicon Controlled Rectifier PNPN device is designed for high volume consumer applications such as temperature; light and speed control; process and remote control; and warning systems, where reliability of operation is important.