Discrete Semiconductor Products

RLS4150TE-11

Obsolete

DIODE GEN PURP 50V 200MA LLDS

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 50V 200MA LLDS

Technical Specifications

Parameters and characteristics for this part

Specification	RLS4150TE-11

Capacitance @ Vr, F	2.5 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	MINI-MELF, DO-213AC, SOD-80
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	LLDS
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Reverse Recovery Time (trr)	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Mounting Type	Current - Average Rectified (Io)	Capacitance @ Vr, F
Rohm Semiconductor RLS4150TE-11	4 ns	Standard	LLDS	1 V	100 nA	Any Speed	200 mA	50 V	200 C	-65 C	DO-213AC MINI-MELF SOD-80	Surface Mount	200 mA	2.5 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 50 V 200mA Surface Mount LLDS

Technical documentation and resources