Optoelectronics
TSTS7100
ActiveVishay General Semiconductor - Diodes Division
EMITTER IR 950NM 250MA TO18
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet
Optoelectronics
TSTS7100
ActiveVishay General Semiconductor - Diodes Division
EMITTER IR 950NM 250MA TO18
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | TSTS7100 |
|---|---|
| Current - DC Forward (If) (Max) [Max] | 250 mA |
| Mounting Type | Through Hole |
| Operating Temperature | 100 °C |
| Orientation | Top View |
| Package / Case | TO-18-2 Metal Can |
| Radiant Intensity (Ie) Min @ If | 100 mA |
| Radiant Intensity (Ie) Min @ If [Min] | 10 mW/sr |
| Type | Infrared (IR) |
| Viewing Angle | 10 ° |
| Voltage - Forward (Vf) (Typ) | 1.3 V |
| Wavelength | 950 nm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 3.45 | |
| 10 | $ 2.44 | |||
| 100 | $ 2.00 | |||
| 500 | $ 1.68 | |||
| 1000 | $ 1.54 | |||
| 2000 | $ 1.48 | |||
| 5000 | $ 1.45 | |||
Description
General part information
TSTS7100 Series
Infrared (IR) Emitter 950nm 1.3V 250mA 10mW/sr @ 100mA 10° TO-18-2 Metal Can
Documents
Technical documentation and resources