Discrete Semiconductor Products

BUK963R3-60E,118

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MOSFET N-CH 60V 120A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 60V 120A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK963R3-60E,118

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	13490 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

Part	Grade	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP BUK963R1-40E,118	Automotive	2.1 V	N-Channel	10 V	2.7 mOhm	10 V	5 V	234 W	100 A	69.5 nC	AEC-Q101	-55 °C	175 ░C	40 V	MOSFET (Metal Oxide)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	9150 pF
Freescale Semiconductor - NXP BUK963R3-60E,118	Automotive	2.1 V	N-Channel	10 V	3 mOhm				120 A	95 nC	AEC-Q101	-55 °C	175 ░C	60 V	MOSFET (Metal Oxide)	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	13490 pF	5 V

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General part information

N-Channel 60 V 120A (Tc) 293W (Tc) Surface Mount D2PAK

Technical documentation and resources