Discrete Semiconductor Products

MSJP20N65A-BP

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N-CHANNEL MOSFET,TO-220AB(H)

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,TO-220AB(H)

Technical Specifications

Parameters and characteristics for this part

Specification	MSJP20N65A-BP

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	1860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	151 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-220AB (H)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Micro Commercial Components MSJP20N65-BP	151 W	-55 °C	150 °C	N-Channel	650 V	Through Hole	1724 pF	4.5 V	10 V	TO-220-3	170 mOhm	MOSFET (Metal Oxide)	20 A	39 nC	30 V	TO-220AB (H)
Micro Commercial Components MSJP20N65A-BP	151 W	-55 °C	150 °C	N-Channel	650 V	Through Hole	1860 pF	4 V	10 V	TO-220-3	190 mOhm	MOSFET (Metal Oxide)	20 A		30 V	TO-220AB (H)	53 nC

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General part information

N-Channel 650 V 20A (Tc) 151W Through Hole TO-220AB (H)

Technical documentation and resources