Discrete Semiconductor Products

JANTX1N6080

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DIODE GEN PURP 100V 5A AXIAL

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Discrete Semiconductor Products

Unknown

DIODE GEN PURP 100V 5A AXIAL

Technical Specifications

Parameters and characteristics for this part

Specification	JANTX1N6080

Capacitance @ Vr, F	230 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Military
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial
Qualification	MIL-PRF-19500/503
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	Axial
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	970 mV

Part	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Supplier Device Package	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Package / Case	Current - Reverse Leakage @ Vr	Grade	Voltage - Forward (Vf) (Max) @ If [Max]	Qualification	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]
Semtech Corporation JANTX1N6080	30 ns	230 pF	Axial	Through Hole	Standard	150 °C	-65 C	200 mA 500 ns	Axial	10 µA	Military	970 mV	MIL-PRF-19500/503	5 A	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 5A Through Hole Axial

Technical documentation and resources

No documents available