Discrete Semiconductor Products

2N7002EY

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N-CHANNEL SMD MOSFET ESD PROTECT

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Discrete Semiconductor Products

Active

N-CHANNEL SMD MOSFET ESD PROTECT

Technical Specifications

Parameters and characteristics for this part

Specification	2N7002EY

Current - Continuous Drain (Id) @ 25°C	340 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.4 nC
Input Capacitance (Ciss) (Max) @ Vds	18 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	350 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
ANBON SEMICONDUCTOR (INT'L) LIMITED 2N7002EY	18 pF	150 °C	N-Channel	5 Ohm	350 mW	4.5 V 10 V	MOSFET (Metal Oxide)	Surface Mount	2.4 nC	2.5 V	SC-59 SOT-23-3 TO-236-3	SOT-23	60 V	340 mA	20 V

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General part information

N-Channel 60 V 340mA (Ta) 350mW (Ta) Surface Mount SOT-23

Technical documentation and resources