Discrete Semiconductor Products

2N7002EY

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N-CHANNEL SMD MOSFET ESD PROTECT

Discrete Semiconductor Products

Active

N-CHANNEL SMD MOSFET ESD PROTECT

Technical Specifications

Parameters and characteristics for this part

Specification	2N7002EY

Current - Continuous Drain (Id) (Ta)	340 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	2.4 nC
Input Capacitance (Ciss) (Max)	18 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23
Power Dissipation (Max)	350 mW
Rds On (Max)	5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Package Name	Package / Case	Vgs(th) (Max)	Gate Charge (Max)	Mounting Type	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Rds On (Max)	FET Type	Operating Temperature	Input Capacitance (Ciss) (Max)
ANBON SEMICONDUCTOR (INT'L) LIMITED 2N7002EY	20 V	340 mA	60 V	SOT-23	SC-59 SOT-23-3 TO-236-3	2.5 V	2.4 nC	Surface Mount	MOSFET (Metal Oxide)	10 V	4.5 V	350 mW	5 Ohm	N-Channel	150 °C	18 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 60 V 340mA (Ta) 350mW (Ta) Surface Mount SOT-23

Technical documentation and resources