Discrete Semiconductor Products

VS-8DKH02-M3/I

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DIODE ARRAY GP 200V 4A FLATPAK

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Discrete Semiconductor Products

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DIODE ARRAY GP 200V 4A FLATPAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-8DKH02-M3/I

Current - Average Rectified (Io) (per Diode)	4 A
Current - Reverse Leakage @ Vr	2 µA
Diode Configuration	2 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	8-PowerTDFN
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	FlatPAK 5x6 (Dual)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	960 mV

Part	Grade	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Qualification	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io) (per Diode)	Technology
Vishay General Semiconductor - Diodes Division VS-8DKH02HM3/I	Automotive	2 µA	200 mA 500 ns	FlatPAK 5x6 (Dual)	AEC-Q101	175 ░C	-55 C	960 mV	200 V	2 Independent	Surface Mount	25 ns	8-PowerTDFN	4 A	Standard
Vishay General Semiconductor - Diodes Division VS-8DKH02-M3/I		2 µA	200 mA 500 ns	FlatPAK 5x6 (Dual)		175 ░C	-55 C	960 mV	200 V	2 Independent	Surface Mount	25 ns	8-PowerTDFN	4 A	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 200 V 4A Surface Mount 8-PowerTDFN

Technical documentation and resources