Discrete Semiconductor Products

S4D02120A

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DIODE SIL CARB 1200V 2A TO220AC

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Discrete Semiconductor Products

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DIODE SIL CARB 1200V 2A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	S4D02120A

Capacitance @ Vr, F	116 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC (TO-220-2)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io)	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If
SMC Diode Solutions S4D02120A	175 ░C	-55 C	Through Hole	10 µA	No Recovery Time	116 pF	1.2 kV	0 ns	TO-220-2	2 A	TO-220AC (TO-220-2)	SiC (Silicon Carbide) Schottky	1.8 V
SMC Diode Solutions S4D02120E	175 ░C	-55 C	Surface Mount	10 µA	No Recovery Time	116 pF	1.2 kV	0 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	2 A	DPAK	SiC (Silicon Carbide) Schottky	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 2A Through Hole TO-220AC (TO-220-2)

Technical documentation and resources