Discrete Semiconductor Products

1N4148

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DIODE GEN PURP 75V 150MA DO35

Discrete Semiconductor Products

Active

DIODE GEN PURP 75V 150MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N4148

Capacitance	4 pF
Current - Average Rectified (Io)	150 mA
Current - Reverse Leakage	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	Axial, DO-35, DO-204AH
Package Name	DO-35
Reverse Recovery Time (trr)	4 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	75 V
Voltage - Forward (Vf) (Max)	1 V

Part	Current - Average Rectified (Io)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Package / Case	Current - Reverse Leakage	Reverse Recovery Time (trr)	Technology	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Mounting Type	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Package Name	Capacitance
NTE Electronics, Inc 1N4148	150 mA	500 ns	200 mA	Axial DO-204AH DO-35	5 µA	4 ns	Standard	175 °C	-65 °C	Through Hole	1 V	75 V	DO-35	4 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Diode 75 V 150mA Through Hole DO-35

Technical documentation and resources

No documents available